Effect of Cooling Condition on Chemical Vapor Deposition Synthesis of Graphene on Copper Catalyst
- Effect of Cooling Condition on Chemical Vapor Deposition Synthesis of Graphene on Copper Catalyst
- Dong Soo Choi; Keun Soo Kim; Hyeongkeun Kim; Yena Kim; TaeYoung Kim; Se-hyun Rhy; 양철민; Dae Ho Yoon; Woo Seok Yang
- Graphene; CVD; Catalyst; growth; cooling rate; grain
- Issue Date
- ACS Applied Materials & Interfaces
- VOL 6, NO 22, 19574-19578
- Here, we show that chemical vapor deposition growth of
graphene on copper foil is strongly affected by the cooling conditions.
Variation of cooling conditions such as cooling rate and hydrocarbon
concentration in the cooling step has yielded graphene islands with different
sizes, density of nuclei, and growth rates. The nucleation site density on Cu
substrate is greatly reduced when the fast cooling condition was applied, while
continuing methane flow during the cooling step also influences the nucleation
and growth rate. Raman spectra indicate that the graphene synthesized under
fast cooling condition and methane flow on cool-down exhibit superior quality
of graphene. Further studies suggest that careful control of the cooling rate and
CH4 gas flow on the cooling step yield a high quality of graphene.
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