Gate-Controlled Spin-Orbit Coupling in InAs/InGaAs Quantum Well Structures

Title
Gate-Controlled Spin-Orbit Coupling in InAs/InGaAs Quantum Well Structures
Authors
김경호박윤호구현철장준연김영근김형준
Keywords
Rashba effect; spin-orbit coupling; quantum well; spin-field effect transistor
Issue Date
2014-07
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 14, NO 7, 5212-5215
Abstract
We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (α) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of α in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of α directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.
URI
http://pubs.kist.re.kr/handle/201004/50206
ISSN
15334880
Appears in Collections:
KIST Publication > Article
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