Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN

Title
Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN
Authors
김대현임원철박재성성태연
Keywords
Metals and alloys; Electrode materials; Surfaces and interfaces; Light absorption and reflection; Optical properties
Issue Date
2014-03
Publisher
Journal of alloys and compounds
Citation
VOL 588, 327-331
Abstract
Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85% at 450 nm, which is higher than that of Ag-only contacts (57%) after annealing at 500 °C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 °C were 2.4 × 10−4 and 6.1 × 10−5 Ω ㎠, respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20% higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 °C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.
URI
http://pubs.kist.re.kr/handle/201004/50214
ISSN
09258388
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KIST Publication > Article
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