Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors
- Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors
- 박윤호; 최준우; 장준연; 최헌진; 구현철
- exchange bias; complementary spin transistor
- Issue Date
- Current applied physics
- VOL 15, NO S1, S32-S35
- Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, þ35.5 mT and 36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.
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