Direct evidence on Ta-metal phase igniting resistive switching in TaOx thin film
- Direct evidence on Ta-metal phase igniting resistive switching in TaOx thin film
- 양민규; 주현수; 김근환; 이전국; 류한철
- TaOx; resistive switching; metal phase igniting
- Issue Date
- Scientific Reports
- VOL 5, 14053
- A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using highresolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LR
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