Direct evidence on Ta-metal phase igniting resistive switching in TaOx thin film

Title
Direct evidence on Ta-metal phase igniting resistive switching in TaOx thin film
Authors
양민규주현수김근환이전국류한철
Keywords
TaOx; resistive switching; metal phase igniting
Issue Date
2015-09
Publisher
Scientific Reports
Citation
VOL 5, 14053
Abstract
A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using highresolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LR
URI
http://pubs.kist.re.kr/handle/201004/50269
ISSN
20452322
Appears in Collections:
KIST Publication > Article
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