Crystalline Direction Dependence of Spin Precession Angle and Its Application to Complementary Spin Logic Devices
- Crystalline Direction Dependence of Spin Precession Angle and Its Application to Complementary Spin Logic Devices
- 박윤호; 김형준; 장준연; 최헌진; 구현철
- Spin-Orbit Interaction; Rashba Effect; Dresselhaus Effect; Spin Precession Angle; Spin-FET
- Issue Date
- Journal of nanoscience and nanotechnology
- VOL 15, NO 10, 7518-7521
- In a semiconductor channel, spin-orbit interaction is divided into two terms, Rashba and Dresselhaus effects, which are key phenomena for modulating spin precession angles. The direction of Rashba field is always perpendicular to the wavevector but that of Dresselhaus field depends on the crystal orientation. Based on the individual Rashba and Dresselhaus strengths, we calculate spin precession angles for various crystal orientations in an InAs quantum well structure. When the channel length is 1 m, the precession angle is 550 for the  direction and 460 for the [1–10] direction, respectively. Using the two spin transistors with different crystal directions, which play roles of n- and p-type transistors in conventional charge transistors, we propose a complementary logic device
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