Crystalline Direction Dependence of Spin Precession Angle and Its Application to Complementary Spin Logic Devices

Title
Crystalline Direction Dependence of Spin Precession Angle and Its Application to Complementary Spin Logic Devices
Authors
박윤호김형준장준연최헌진구현철
Keywords
Spin-Orbit Interaction; Rashba Effect; Dresselhaus Effect; Spin Precession Angle; Spin-FET
Issue Date
2015-10
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 15, NO 10, 7518-7521
Abstract
In a semiconductor channel, spin-orbit interaction is divided into two terms, Rashba and Dresselhaus effects, which are key phenomena for modulating spin precession angles. The direction of Rashba field is always perpendicular to the wavevector but that of Dresselhaus field depends on the crystal orientation. Based on the individual Rashba and Dresselhaus strengths, we calculate spin precession angles for various crystal orientations in an InAs quantum well structure. When the channel length is 1 m, the precession angle is 550 for the [110] direction and 460 for the [1–10] direction, respectively. Using the two spin transistors with different crystal directions, which play roles of n- and p-type transistors in conventional charge transistors, we propose a complementary logic device
URI
http://pubs.kist.re.kr/handle/201004/50279
ISSN
15334880
Appears in Collections:
KIST Publication > Article
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