Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs

Title
Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs
Authors
S.-J. ChangM. BawedinF. AndrieuC. Navarro김용태Y. BaeS. Cristoloveanu
Keywords
FDSOI; Coupling effects; Short-channel; Ultra-thin film
Issue Date
2015-11
Publisher
Microelectronic engineering
Citation
VOL 147, 159-164
Abstract
We investigated the characteristics of state-of-the-art FDSOI MOSFETs in a wide range of temperature by focusing on the effects of the back-gate bias, Si film thickness and channel length. High device performance and remarkably reduced short-channel effect with decreasing Si film thickness are achieved in ultra-thin film SOI devices. Systematic measurements reveal an unusual coupling effect resulting from the competition between front-gate, back-gate and temperature-dependent short-channel effect. Counter-intuitively, the impact of the back-gate bias can be smaller in 5 nm than in 10 nm thick MOSFETs, in particular in very short devices operated at 300 K.
URI
http://pubs.kist.re.kr/handle/201004/50283
ISSN
01679317
Appears in Collections:
KIST Publication > Article
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