Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs
- Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs
- S.-J. Chang; M. Bawedin; F. Andrieu; C. Navarro; 김용태; Y. Bae; S. Cristoloveanu
- FDSOI; Coupling effects; Short-channel; Ultra-thin film
- Issue Date
- Microelectronic engineering
- VOL 147, 159-164
- We investigated the characteristics of state-of-the-art FDSOI MOSFETs in a wide range of temperature by focusing on the effects of the back-gate bias, Si film thickness and channel length. High device performance and remarkably reduced short-channel effect with decreasing Si film thickness are achieved in ultra-thin film SOI devices. Systematic measurements reveal an unusual coupling effect resulting from the competition between front-gate, back-gate and temperature-dependent short-channel effect. Counter-intuitively, the impact of the back-gate bias can be smaller in 5 nm than in 10 nm thick MOSFETs, in particular in very short devices operated at 300 K.
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