Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes

Title
Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes
Authors
Ah Hyun Park서태훈S. ChandramohanGun Hee Lee민경현이슬아김명종Yong Gyoo HwangEun-Kyung Suh
Keywords
LED; Carbon nanotubes; stress-relaxation
Issue Date
2015-10
Publisher
Nanoscale
Citation
VOL 7, NO 37, 15099-15105
Abstract
A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintained their integrity at high reaction temperature and led to suppression of edge dislocations and biaxial stress relaxation by up to 0.32 GPa in a GaN template layer. InGaN/GaN multi-quantum-well light-emitting diodes (LEDs) on this high-quality GaN template offered enhanced internal quantum efficiency and light output power with reduced efficiency droop. The method developed here has high potential to replace current ELO methods such as patterned sapphire substrates or buffer layers like SiO2 and SiNx.
URI
http://pubs.kist.re.kr/handle/201004/50304
ISSN
20403364
Appears in Collections:
KIST Publication > Article
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