Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

Title
Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer
Authors
심성훈김형준구현철이윤희장준연
Keywords
spin injection; modulation doping; in situ grown Fe/MgO; 3therminal Hanle curve
Issue Date
2015-09
Publisher
Applied physics letters
Citation
VOL 107, NO 10, 102407-1-102407-5
Abstract
We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (DV) of 6.3mV at 10K and 0.8mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 lm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs. VC 2015 AIP Publishing LLC.
URI
http://pubs.kist.re.kr/handle/201004/50334
ISSN
00036951
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