Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink
- Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink
- 김용태; 이정희; 전영민
- GaN; Power FET; Diamond Heat Sink
- Issue Date
- International Conference on Solid State Devices and Materials
- VOL PS-6-1, 168-169
- 800V recessed gate GaN power FETs have been fabricated by using high accuracy lithography. Low on resistance less than 15 mD:cm2 with high threshold voltage can be achieved with AIGaN/GaN heterostructure optimized with Al composition and thickness of step graded A1GaN layer. For the high temperature capability, diamond thin films are deposited on the back side of Si substrate. As
a result, the device temperature is quickly dropped from 125 to 65 oC as increasing the thickness of nano-crystalline diamond thin film up to 0.8 μm
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