GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding

Title
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding
Authors
김상현금대명박민수김창주최원준
Keywords
Waferbonding; GaAs onSi; GaAs solarcell; GaAs/Si
Issue Date
2015-10
Publisher
Solar energy materials and solar cells
Citation
VOL 141, 372-376
Abstract
In thiswork,wedevelopedwaferbondingtechniquestobondGaAsandSiwafers.Waferbondingwas carried outatroomtemperaturewithouthightemperatureannealingprocesses.Thebondedinterface showedalowinterfaceresistanceof8.8 10 3 Ω cm2.Wealsoexploitedthenewbondingtechniquesto fabricate aGaAssolarcellonaSisubstrate.Thesolarcellshowedahighenergyconversionefficiency (13.25%)evenwithoutanantireflection coating.TheperformanceofthefabricatedGaAs/Sisolarcellwas comparable tothatofahomogeneousGaAssolarcellgrownonaGaAssubstrate.
URI
http://pubs.kist.re.kr/handle/201004/50413
ISSN
09270248
Appears in Collections:
KIST Publication > Article
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