Photostability enhancement of InP/ZnS quantum dots enabled by In2O3 overcoating

Title
Photostability enhancement of InP/ZnS quantum dots enabled by In2O3 overcoating
Authors
조정호김종훈이선형장호성장동선이주철박고운최윤영하충훈양희선
Keywords
InP/ZnS quantum dots; Photostability; Light-emitting diodes
Issue Date
2015-10
Publisher
Journal of alloys and compounds
Citation
VOL 647, 6-13
Abstract
Although the present-level quantum dots (QDs) exhibit excellent photoluminescent performance, their photostability under a prolonged photoexcitation stays doubtful and still unsatisfactory from an industrial perspective, since it determines the reliability of QD-incorporated devices such as QD-lightemitting diodes (QD-LEDs). In the present work, the overcoating of red-emitting InP/ZnS QDs with the oxide phase of In2O3 is attempted to suppress the QD photooxidation, thus rendering them highly photostable. The efficacy of the oxide overlayer in substantially alleviating the QD photodegradation is verified through a comparative photostability test, where two colloidal solutions of bare versus In2O3-overcoated InP/ZnS (InP/ZnS@In2O3) QDs are identically subjected to a continuous UV irradiation for an extended period of time. Furthermore, both InP/ZnS and InP/ZnS@In2O3 QDs are packaged as colorconverters with a blue LED chip, and the operational stability of the fabricated QD-LEDs is examined at a forward bias of 60 mA. Consistent with the results of UV irradiation experiment, InP/ZnS@In2O3 QDLED exhibits a superior device stability against a continual operation as compared with InP/ZnS one.
URI
http://pubs.kist.re.kr/handle/201004/50429
ISSN
09258388
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