Molecular-scale charge trap medium for organic non-volatile memory transistors

Title
Molecular-scale charge trap medium for organic non-volatile memory transistors
Authors
이상아김대윤정광운이상현배수강이동수김태욱왕건욱
Keywords
Triphenylene; Organic non-volatile memory transistor; small molecule; Charge trap layer
Issue Date
2015-12
Publisher
Organic electronics
Citation
VOL 27, 18-23
Abstract
In this work, we introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor(ONVMTs).We use twodifferent types of small molecules, 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), which have the same triphenylene cores with either hydroxyl or methoxy end groups. The thickness of the small molecule charge trap layer was sophisticatedly controlled using the thermal evaporation method. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis revealed that there were negligible differences in the chemical structures of both small molecules before and after thermal deposition process. TheONVMTs with a 1-nm-thickHHTPcharge trap layer showed a largehysteresiswindow, approximately 20V, under a double sweep of the gate bias between 40 V and 40 V. The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis. The number of trapped charges on the HHTP charge trap layer was measured to be 4.21 1012 cm 2. By varying the thickness of the molecularscale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.
URI
http://pubs.kist.re.kr/handle/201004/50515
ISSN
15661199
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KIST Publication > Article
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