Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector
- Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector
- 정철승; 김승민; 문현승; 한규철; 권준연; 홍영기; Inturu Omkaram; 윤영기; 김선국; Jozeph Park
- Issue Date
- Scientific Reports
- VOL 5, 15313
- Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition
(CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown
multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which
are attributed to the formation of Se vacancies generated at the decomposition temperature
(650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm2/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τrise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications.
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