Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

Title
Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector
Authors
정철승김승민문현승한규철권준연홍영기Inturu Omkaram윤영기김선국Jozeph Park
Issue Date
2015-10
Publisher
Scientific Reports
Citation
VOL 5, 15313
Abstract
Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm2/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τrise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications.
URI
http://pubs.kist.re.kr/handle/201004/50584
ISSN
20452322
Appears in Collections:
KIST Publication > Article
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