Growth and characterization of semiinsulating carbon-doped/undoped GaN multiple-layer buffer
- Growth and characterization of semiinsulating carbon-doped/undoped GaN multiple-layer buffer
- Dong Seok Kim; Chul Ho Won; Hee Sung Kang; Yung Jo Kim; 김용태; In Man Kang; Jung Hee Lee
- GaN power MOS; Carbon doped GaN; buffer layer; epitaxial growth
- Issue Date
- Semiconductor science and technology
- VOL 30, 35015-35021
- We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics.
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