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dc.contributor.author손동혁-
dc.contributor.author주영우-
dc.contributor.authorV Sindhuri-
dc.contributor.author임기식-
dc.contributor.author서재화-
dc.contributor.author김용태-
dc.contributor.author강인만-
dc.contributor.authorSorin Cristoloveanu-
dc.contributor.authorMayline Bawedrin-
dc.contributor.author이정희-
dc.date.accessioned2015-12-03T02:07:17Z-
dc.date.available2015-12-03T02:07:17Z-
dc.date.issued201511-
dc.identifier.citationVOL 147, 155-158-
dc.identifier.issn01679317-
dc.identifier.other45167-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/50589-
dc.description.abstractAlGaN/GaN FinFETs with various fin widths (Wfin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wetetch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide Wfin of 150 nm showed normally-on operation with threshold voltage (Vth) of 2.5 and 5.0 V, respectively. The devices also exhibited broad transconductance (gm), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with Wfin of 50 nm exhibited normally-off operation with Vth of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.-
dc.publisherMicroelectronic engineering-
dc.subjectFin width-
dc.subjectTMAH solution-
dc.subjectFinFETs-
dc.subject2DEG-
dc.subjectAlGaN/GaN-
dc.subjecttrapping effect-
dc.subjectnarrow gate-
dc.titleEffects of sidewall MOS channel on performance of AlGaN/GaN FinFET-
dc.typeArticle-
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