Revisiting Metal Sulfi de Semiconductors: A Solution-Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

Title
Revisiting Metal Sulfi de Semiconductors: A Solution-Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects
Authors
Dipak V. ShindeSupriya A. PatilKeumnam ChoDo Young AhnNabeen K. ShresthaRajaram S. Mane이중기S.-H. Han
Keywords
Nanostructured thin film; Hall effect; metal sulfide
Issue Date
2015-09
Publisher
Advanced functional materials
Citation
VOL 25, NO 36, 5739-5747
Abstract
Nanostructured thin fi lms of metal sulfi des (MS) are highly desirable materials for various optoelectronic device applications. However, a general lowtemperature protocol that describes deposition of varieties of MS structures, especially in their fi lm form is still not available in literatures. Here, a simple and highly effective general solution-based deposition protocol for highly crystalline and well-defi ned nanostructured MS thin fi lms from ethanol on variety of conducting and non-conducting substrates is presented. The fi lms display remarkable electronic properties such as high carrier mobility and high conductivity. When NiS thin fi lm deposited on a fl exible polyethylene terephthalate (PET) substrate is used as a fl uorine doped tin oxide (FTO)-free counter electrode in dye-sensitized solar cells, it exhibits a solar-to-electric power conversion effi ciency of 9.27 ± 0.26% with the highest conversion effi ciency as high as 9.50% (vs 8.97 ± 0.07% exhibited by Pt-electrode). In addition, the NiS fi lm deposited on a Ti-foil has demonstrated an outstanding catalytic activity for the hydrogen and oxygen evolution reactions from water.
URI
http://pubs.kist.re.kr/handle/201004/50612
ISSN
1616301X
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KIST Publication > Article
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