Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer

Title
Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer
Authors
이영택권혁재김진성김홍희이윤재임정아송용원이연진최원국황도경임성일
Keywords
black phosphorus (BP); MoS2; 2D nanosheet transistor; P(VDF-TrFE); ferroelectric memoryCMOS; dual-gate transistor
Issue Date
2015-10
Publisher
ACS Nano
Citation
VOL 9, NO 10, 10394-10401
Abstract
Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon fluorine (C F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm2 V 1 s 1 with a 103 on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.
URI
http://pubs.kist.re.kr/handle/201004/50629
ISSN
19360851
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KIST Publication > Article
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