Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer
- Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer
- 이영택; 권혁재; 김진성; 김홍희; 이윤재; 임정아; 송용원; 이연진; 최원국; 황도경; 임성일
- black phosphorus (BP); MoS2; 2D nanosheet transistor; P(VDF-TrFE); ferroelectric memoryCMOS; dual-gate transistor
- Issue Date
- ACS Nano
- VOL 9, NO 10, 10394-10401
- Two-dimensional van der Waals (2D vdWs) materials are a
class of new materials that can provide important resources for future
electronics and materials sciences due to their unique physical properties.
Among 2D vdWs materials, black phosphorus (BP) has exhibited significant
potential for use in electronic and optoelectronic applications
because of its allotropic properties, high mobility, and direct and narrow
band gap. Here, we demonstrate a few-layered BP-based nonvolatile
memory transistor with a poly(vinylidenefluoride-trifluoroethylene)
(P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that
our BP-based ferroelectric transistors operate satisfactorily at room
temperature in ambient air and exhibit a clear memory window. Unlike
conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon fluorine (C F) dipole effect of
the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm2 V 1 s 1 with a 103 on/off current ratio. For more advanced memory
applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter
circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and
memory output voltage efficiency of 95%.
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