Single Sisubmicronwirephotodetectorfabricatedbysimplewet etching process

Title
Single Sisubmicronwirephotodetectorfabricatedbysimplewet etching process
Authors
Dong-Ki Lee고형덕YounghakCho
Keywords
Si submicron wire; Responsivity; Photodetector; External quantum efficiency (EQE)
Issue Date
2015-12
Publisher
Materials letters
Citation
VOL 160, 562-565
Abstract
In this paper,we report on anoxidized single Si submicron wire photodetector with a metal-semi- conductor-metal (MSM) structure. The single Si submicron wire was successfully fabricated using a simple and cost-effective wet etching process. The single Si submicron wire photodetector with Si O2 layer achieved responsivity of 1.84A/W and external quantum efficiency (EQE) of 6.23 102% withil- lumination of 365nm. Furthermore, rapid and stable ON/OFF switching was achieved and reproducible by the oxidation of the Si surface.
URI
http://pubs.kist.re.kr/handle/201004/50795
ISSN
0167577X
Appears in Collections:
KIST Publication > Article
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