Spin injection in indium arsenide

Title
Spin injection in indium arsenide
Authors
Mark Johnson구현철한석희장준연
Keywords
spintronics; spin injection; spin polarized current; Datta Das conductance oscillation; Rashba spin-orbit coupling; spin field effect transistor
Issue Date
2015-08
Publisher
Frontiers in Physics
Citation
VOL 3, NO 62, 1-13
Abstract
Inatwodimensionalelectronsystem(2DES),coherentspinprecessionofaballisticspinpolarizedcurrent,controlledbytheRashbaspinorbitinteraction,isaremarkablephenomenonthat’sbeenobservedonlyrecently.DattaandDaspredictedthisprecessionwouldmanifestasanoscillationinthesource-drainconductanceofthechannelinaspin-injectedfieldeffecttransistor(SpinFET).Theindiumarsenidesinglequantumwellmaterialssystemhasproventobeidealforexperimentalconfirmation.The2DEScarriershavehighmobility,lowsheetresistance,andhighspinorbitinteraction.Techniquesforelectricalinjectionanddetectionofspinpolarizedcarriersweredevelopedoverthelasttwodecades.AdaptingtheproposedSpinFETtotheJohnson–Silsbeenon-localgeometrywasakeytothefirstexperimentaldemonstrationofgatevoltagecontrolledcoherentspinprecession.Morerecently,anewtechniquemeasuredtheoscillationasafunctionofchannellength.Thisarticlegivesanoverviewoftheexperimentalphenomenologyofthespininjectiontechnique.WethenreviewdetailsoftheapplicationofthetechniquetoInAssinglequantumwell(SQW)devices.TheeffectivemagneticfieldassociatedwithRashbaspin-orbitcouplingisdescribed,andaheuristicmodelofcoherentspinprecessionispresented.ThetwosuccessfulempiricaldemonstrationsoftheDattaDasconductanceoscillationarethendescribedanddiscussed.
URI
http://pubs.kist.re.kr/handle/201004/50872
ISSN
2296424X
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KIST Publication > Article
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