Improved Dielectric Properties of CaCu3Ti4O12 films with a CaTiO3 Interlayer on Pt/TiO2/SiO2/Si Substrates Prepared by Pulsed Laser Deposition

Title
Improved Dielectric Properties of CaCu3Ti4O12 films with a CaTiO3 Interlayer on Pt/TiO2/SiO2/Si Substrates Prepared by Pulsed Laser Deposition
Authors
Sung-Yun LeeHui Eun KimWilliam Jo김영환Sang-Im Yoo
Keywords
CaCu3Ti4O12 films; pulsed laser deposition; dielectric property; Poole-Frenkel conduction model; leakage current
Issue Date
2015-11
Publisher
Electronic materials letters
Citation
VOL 11, NO 6, 1003-1011
Abstract
We report the greatly improved dielectric properties of CaCu3Ti4O12 (CCTO) films with a 60 nm-thick CaTiO3 (CTO) interlayer on Pt/TiO2/ SiO2/Si substrates. Both CCTO films and CTO interlayers were prepared by pulsed laser deposition (PLD). With increasing the thickness of CCTO from 200 nm to 1.3 μm, the dielectric constants (εr) at 10 kHz in both CCTO single-layered and CTO/CTO double-layered films increased from ~260 to ~6000 and from ~630 to ~3700, respectively. Compared with CCTO single-layered films, CCTO/CTO double-layered films irrespective of CCTO film thickness exhibited a remarkable decrease in their dielectric losses (tanδ) (<0.1 at the frequency region of 1 - 100 kHz) and highly reduced leakage current density at room temperature. The reduced leakage currents in CCTO/ CTO double-layered films are attributable to relatively higher trap ionization energies in the Poole-Frenkel conduction model.
URI
http://pubs.kist.re.kr/handle/201004/50935
ISSN
17388090
Appears in Collections:
KIST Publication > Article
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