Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
- Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
- 신형욱; 이상준; 김두근; 배명보; 허재영; 최경진; 최원준; 최정우; 신재철
- InAs Nano wire; SWIR; Si substrate
- Issue Date
- Scientific Reports
- VOL 5:10764, 1-8
- One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.
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