Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

Title
Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
Authors
신형욱이상준김두근배명보허재영최경진최원준최정우신재철
Keywords
InAs Nano wire; SWIR; Si substrate
Issue Date
2015-06
Publisher
Scientific Reports
Citation
VOL 5:10764, 1-8
Abstract
One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.
URI
http://pubs.kist.re.kr/handle/201004/50945
ISSN
20452322
Appears in Collections:
KIST Publication > Article
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