In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

Title
In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys
Authors
김상현Masafumi YokoyamaNoriyuki TaokaRyosho NakaneTetsuji YasudaOsamu IchikawaNoboru FukuharaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2012-02
Publisher
Applied physics letters
Citation
VOL 100, NO 073504
Abstract
We have demonstrated InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with self-aligned Co-InGaAs source/drain (S/D). The fabricated MOSEFETs exhibited excellent transistor operation and an on/off ratio of 10(4) without any S/D ion implantation. It was found that the Co-InGaAs alloys can be formed by direct reaction of Co and InGaAs during annealing at low temperature and that the unreacted Co is selectively etched from Co-InGaAs by an HCl solution without significant etching of Co-InGaAs. We also found that the Co-InGaAs alloys have low sheet resistance of less than 50 Omega/square and relatively low Schottky barrier height of 0.12 eV against electrons in InGaAs with high thermal stability. (C) 2012 American Institute of Physics
URI
http://pubs.kist.re.kr/handle/201004/50947
ISSN
00036951
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