III?V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal?Oxide?Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

Title
III?V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal?Oxide?Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
Authors
Masafumi Yokoyama김상현Rui ZhangNoriyuki TaokaYuji UrabeTatsuro MaedaHideki TakagiTetsuji YasudaHisashi YamadaOsamu IchikawaNoboru FukuharaMasahiko HataMasakazu SugiyamaYoshiaki NakanoMitsuru TakenakaShinichi Takagi
Issue Date
2012-06
Publisher
Applied Physics Express
Citation
VOL 5, NO 076501
Abstract
We demonstrated the integration of high-mobility channel InGaAs n-channel and Ge p-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs and pMOSFETs) with self-aligned Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate by direct wafer bonding (DWB). Ni-based metal S/D and Al2O3-based gate stacks have realized the fabrication of high-electron-mobility InGaAs-on-insulator (InGaAs-OI) nMOSFETs and high-hole-mobility Ge pMOSFETs at the same time. The InGaAs-OI nMOSFETs and Ge pMOSFETs exhibited high electron and hole mobilities of 1800 and 260 cm(2) V-1 s(-1) and mobility enhancements against Si of 3.5x and 2.3x, respectively. (C) 2012 The Japan Society of Applied Physics
URI
http://pubs.kist.re.kr/handle/201004/50949
ISSN
18820778
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KIST Publication > Article
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