High-performance a MoS2 Nanosheet-based Nonvolatile Memory Transistor with a Ferroelectric Polymer and Graphene Source-Drain Electrode

Title
High-performance a MoS2 Nanosheet-based Nonvolatile Memory Transistor with a Ferroelectric Polymer and Graphene Source-Drain Electrode
Authors
이영택황도경임성일
Keywords
MoS2; PVDF-TrFE; Ferroelectric field-effect transistor (FeFET)
Issue Date
2015-11
Publisher
Journal of the Korean Physical Society
Citation
VOL 67, NO 9, 1499-1503
Abstract
Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm2/Vs with a high on/off current ratio of more than 107, and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated.
URI
http://pubs.kist.re.kr/handle/201004/50950
ISSN
03744884
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KIST Publication > Article
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