Dielectric functions and interband transitions of InxAl1 xP alloys

Title
Dielectric functions and interband transitions of InxAl1 xP alloys
Authors
T.J. KimS.Y. HwangJ.S. ByunD.E. AspnesE.H. Lee송진동C.-T. LiangY.-C. ChangH.G. ParkJ. ChoiJ.Y. KimY.R. KangJ.C. ParkY.D. Kim
Keywords
InAlP; Dielectric Function; Critical point; Ellipsometry
Issue Date
2014-12
Publisher
Current applied physics
Citation
VOL 14, NO 9, 1273-1276
Abstract
We report pseudodielectric functions <epsilon> from 1.5 to 6.0 eV of InxAl1 (-) P-x ternary alloy films. Data were obtained by spectroscopic ellipsometry on 1.2 mu m thick films grown on (001) GaAs substrates by molecular beam epitaxy. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations using the linear augmented Slater-type orbital method.
URI
http://pubs.kist.re.kr/handle/201004/50956
ISSN
15671739
Appears in Collections:
KIST Publication > Article
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