Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

Title
Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys
Authors
이재욱이득희권범진현도빈남산백승협김진상
Keywords
Bismuth telluride; thermoelectric; Sn doping; mechanical deformation; hot press
Issue Date
2015-06
Publisher
Journal of electronic materials
Citation
VOL 44, NO 6, 1926-1930
Abstract
In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 9 1019/cm3 to 2.4 9 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.
URI
http://pubs.kist.re.kr/handle/201004/51065
ISSN
03615235
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KIST Publication > Article
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