Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys
- Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys
- 이재욱; 이득희; 권범진; 현도빈; 남산; 백승협; 김진상
- Bismuth telluride; thermoelectric; Sn doping; mechanical deformation; hot press
- Issue Date
- Journal of electronic materials
- VOL 44, NO 6, 1926-1930
- In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 9 1019/cm3 to 2.4 9 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.
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