Fractional Quantum Hall States in Bilayer Graphene Probed by Transconductance Fluctuations

Title
Fractional Quantum Hall States in Bilayer Graphene Probed by Transconductance Fluctuations
Authors
김영욱이동수정수용Viera SkakalovaT. TaniguchiK. Watanabe김준성Jurgen H. Smet
Keywords
bilayer graphene; transconductance fluctuations; fractional quantum Hall states; electron-hole symmetry
Issue Date
2015-11
Publisher
Nano letters
Citation
VOL 15, NO 11, 7445-7451
Abstract
We have investigated fractional quantum Hall (QH) states in Bernal-stacked bilayer graphene using transconductance fluctuation measurements. A variety of odddenominator fractional QH states with νQH → νQH + 2 symmetry, as previously reported, are observed. However, surprising is that also particle-hole symmetric states are clearly resolved in the same measurement set. We attribute their emergence to the reversal of orbital states in the octet level scheme induced by a strong local charge imbalance, which can be captured by the transconductance fluctuations. Also the even-denominator fractional QH state at filling −1/2 is observed. However, contrary to a previous study on a suspended graphene layer [Ki et al. Nano Lett. 2014, 14, 2135], the particle-hole symmetric state at filling 1/2 is detected as well. These observations suggest that the stability of both odd and even denominator fractional QH states is very sensitive to local transverse electric fields in bilayer graphene.
URI
http://pubs.kist.re.kr/handle/201004/51090
ISSN
15306984
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KIST Publication > Article
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