Fractional Quantum Hall States in Bilayer Graphene Probed by Transconductance Fluctuations
- Fractional Quantum Hall States in Bilayer Graphene Probed by Transconductance Fluctuations
- 김영욱; 이동수; 정수용; Viera Skakalova; T. Taniguchi; K. Watanabe; 김준성; Jurgen H. Smet
- bilayer graphene; transconductance fluctuations; fractional quantum Hall states; electron-hole symmetry
- Issue Date
- Nano letters
- VOL 15, NO 11, 7445-7451
- We have investigated fractional quantum Hall (QH) states in Bernal-stacked bilayer graphene using transconductance fluctuation measurements. A variety of odddenominator fractional QH states with νQH → νQH + 2 symmetry, as previously reported, are observed. However, surprising is that also particle-hole symmetric states are clearly resolved in the same measurement set. We attribute their emergence to the reversal of orbital states in the octet level scheme induced by a strong local charge imbalance, which can be captured by the transconductance fluctuations. Also the even-denominator fractional QH state at filling −1/2 is observed. However, contrary to a previous study on a
suspended graphene layer [Ki et al. Nano Lett. 2014, 14, 2135], the particle-hole symmetric state at filling 1/2 is detected as well. These observations suggest that the stability of both odd and even denominator fractional QH states is very sensitive to local transverse electric fields in bilayer graphene.
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