Diamagnetic Shift of a InGaP-AlInGaP Semiconductor Single Quantum Well under Pulsed-magnetic Fields

Title
Diamagnetic Shift of a InGaP-AlInGaP Semiconductor Single Quantum Well under Pulsed-magnetic Fields
Authors
BK Choi김영민송진동
Keywords
InGaP; InGaAlP; Single Quantum well; magnetic field
Issue Date
2015-09
Publisher
Applied Science and Convergence Technology
Citation
VOL 24, NO 5, 1
Abstract
Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-Schrödinger equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.
URI
http://pubs.kist.re.kr/handle/201004/51117
ISSN
22886559
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KIST Publication > Article
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