Optical Properties of InP/InGaP Quantum Structures Grown by a Migration Enhanced Epitaxy with Different Growth Cycles

Title
Optical Properties of InP/InGaP Quantum Structures Grown by a Migration Enhanced Epitaxy with Different Growth Cycles
Authors
JW OHIW CHOMY RYU송진동
Keywords
InP; InGaP; MBE; optical property
Issue Date
2015-05
Publisher
Applied Science and Convergence Technology
Citation
VOL 24, NO 3, 67
Abstract
InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migrationenhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles.
URI
http://pubs.kist.re.kr/handle/201004/51118
ISSN
22886559
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KIST Publication > Article
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