Luminescence Properties of InAlAs/AlGaAs Quantum Dots Grown by Modified Molecular Beam Epitaxy

Title
Luminescence Properties of InAlAs/AlGaAs Quantum Dots Grown by Modified Molecular Beam Epitaxy
Authors
SR KWONMY RYU송진동
Keywords
Luminescence; InAlAs; AlGaAs
Issue Date
2014-11
Publisher
Applied Science and Convergence Technology
Citation
VOL 23, NO 6, 387
Abstract
Self-assembled InAlAs/AlGaAs quantum dots (QDs) on GaAs substrates were grown by using modified molecular epitaxy beam in Stranski-Krastanov method. In order to study the structural and optical properties of InAlAs/AlGaAs QDs, atomic force microscopy (AFM) and photoluminescence (PL) measurements are conducted. The size and uniformity of QDs have been observed from the AFM images. The average widths and heights of QDs are increased as the deposition time increases. The PL spectra of QDs are composed of two peaks. The PL spectra of QDs were analyzed by the excitation laser power- and temperature-dependent PL, in which two PL peaks are attributed to two predominant sizes of QDs.
URI
http://pubs.kist.re.kr/handle/201004/51119
ISSN
22886559
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE