Effect of Growth Temperature on the Luminescence Properties of InP/GaP Short-Period Superlattice Structures
- Effect of Growth Temperature on the Luminescence Properties of InP/GaP Short-Period Superlattice Structures
- HR Byun; MY RYU; 송진동; CL Lee
- InP; GaP; SPS
- Issue Date
- Applied Science and Convergence Technology
- VOL 24, NO 1, 22-26
- The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various
temperatures from 400oC to 490oC have been investigated by using temperature-dependent
photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements.
The PL peak energy for SPS samples decreases as the growth temperature increases. The
decreased PL energy of ∼10 meV for the sample grown at 425oC compared to that for
400oC-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at
460oC and 490oC exhibit the significant reduction of the PL peak energies due to the combined
effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering.
The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial
separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures
can be controlled by varying growth temperature, leading to LCM formation and CuPt-B
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