Effect of Growth Temperature on the Luminescence Properties of InP/GaP Short-Period Superlattice Structures

Title
Effect of Growth Temperature on the Luminescence Properties of InP/GaP Short-Period Superlattice Structures
Authors
HR ByunMY RYU송진동CL Lee
Keywords
InP; GaP; SPS
Issue Date
2015-01
Publisher
Applied Science and Convergence Technology
Citation
VOL 24, NO 1, 22-26
Abstract
The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from 400oC to 490oC have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ∼10 meV for the sample grown at 425oC compared to that for 400oC-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at 460oC and 490oC exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.
URI
http://pubs.kist.re.kr/handle/201004/51120
ISSN
22886559
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KIST Publication > Article
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