Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

Title
Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition
Authors
Chang-Soo ParkYu ZhaoYoon ShonIm Taek YoonCheol Jin Lee송진동Haigun LeeEun Kyu Kim
Keywords
manganese; graphene; ferromagnetic
Issue Date
2015-05
Publisher
Journal of materials chemistry. C, Materials for optical and electronic devices
Citation
VOL 3, 4235
Abstract
We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H-c) of 188 Oe and a remanent magnetization of 102 emu cm(-3) at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm(2) V-1 s(-1) at room temperature.
URI
http://pubs.kist.re.kr/handle/201004/51125
ISSN
20507526
Appears in Collections:
KIST Publication > Article
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