Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

Title
Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory
Authors
Yiming YangXingyue PengHong-Seok KimTaeho KimSanghun Jeon강항규송진동최원준Yong-Joo DohDong Yu
Keywords
Hot Carrier; InAs Nanowires; Nonvolatile Memory
Issue Date
2015-07
Publisher
Nano letters
Citation
VOL 15, NO 9, 5875-5882
Abstract
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.
URI
http://pubs.kist.re.kr/handle/201004/51131
ISSN
15306984
Appears in Collections:
KIST Publication > Article
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