Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Title
Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
Authors
Eun-Hye Lee송진동한일기Soo-Kyung ChangFabian LangerSven HoflingAlfred ForchelMartin KampJong-Su Kim
Keywords
droplet; position-retrievable; GaAs
Issue Date
2015-03
Publisher
Nanoscale research letters
Citation
VOL 10, 114
Abstract
The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/mu m(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
URI
http://pubs.kist.re.kr/handle/201004/51133
ISSN
1556276X
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KIST Publication > Article
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