Synthesis of Large-Area Multi-layer Hexagonal Boron Nitride for High Material Performance

Title
Synthesis of Large-Area Multi-layer Hexagonal Boron Nitride for High Material Performance
Authors
김수민Allen HsuMin Ho ParkSang Hoon ChaeSeok Joon Yun이주송Dae-Hyun ChoWenjing FangChanggu LeeToma´s PalaciosMildred Dresselhaus김기강이영희Jing Kong
Keywords
Hexagonal boron nitride; Synthesis; CVD
Issue Date
2015-10
Publisher
Nature Communications
Citation
VOL 6, NO 8662, 1-11
Abstract
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of highquality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of B24,000 cm2V 1 s 1 at room temperature, higher than that (B13,000 2V 1 s 1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) fieldeffect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.
URI
http://pubs.kist.re.kr/handle/201004/51164
ISSN
20411723
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KIST Publication > Article
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