Carrier mobility enhancement of tensile strained Si and SiGe nanowires via surface defect engineering

Title
Carrier mobility enhancement of tensile strained Si and SiGe nanowires via surface defect engineering
Authors
마진원이우정J. M. BaeK. S. JeongS. H. OhJ. H. KimS.-H. KimJ.-H. Seo안재평H. Kim조만호
Keywords
EELS; EPTP; Si; SiGe; nanowire; strain; surface defect; passivation
Issue Date
2015-11
Publisher
Nano letters
Citation
VOL 15, NO 11, 7204-7210
Abstract
Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%
URI
http://pubs.kist.re.kr/handle/201004/51204
ISSN
15306984
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KIST Publication > Article
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