Chalcogenization derived band-gap grading in solution processed CuInxGa1-x(Se,S)2 thin film solar cells
- Chalcogenization derived band-gap grading in solution processed CuInxGa1-x(Se,S)2 thin film solar cells
- 박세진; 전효상; 조진우; 황윤정; 박경수; 심형섭; 송재규; 조윤애; 김동욱; 김지현; 민병권
- chalcogenization; CIGS; solution process; band gap grading
- Issue Date
- ACS Applied Materials & Interfaces
- VOL 7, 27391-27396
- Significant enhancement of solution-processed CuInxGa1−x(Se,S)2 (CIGSSe) thin-film solar cell performance was achieved by inducing a band gap gradient in the film thickness, which was triggered by the chalcogenization process. Specifically, after the preparation of an amorphous mixed oxide film of Cu, In, and Ga by a simple paste coating method chalcogenization under Se vapor, along with the flow of dilute H2S gas, resulted in the formation of CIGSSe films with graded composition distribution: S-rich top, In- and Se-rich middle, and Ga- and S-rich bottom. This uneven compositional distribution was confirmed to lead to a band gap gradient in the film, which may also be responsible for enhancement in the open circuit voltage and reduction in photocurrent loss, thus increasing the overall efficiency. The highest power conversion efficiency of 11.7% was achieved with Jsc of 28.3 mA/cm2, Voc of 601 mV, and FF of 68.6%.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.