Chalcogenization derived band-gap grading in solution processed CuInxGa1-x(Se,S)2 thin film solar cells

Title
Chalcogenization derived band-gap grading in solution processed CuInxGa1-x(Se,S)2 thin film solar cells
Authors
박세진전효상조진우황윤정박경수심형섭송재규조윤애김동욱김지현민병권
Keywords
chalcogenization; CIGS; solution process; band gap grading
Issue Date
2015-12
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 7, 27391-27396
Abstract
Significant enhancement of solution-processed CuInxGa1−x(Se,S)2 (CIGSSe) thin-film solar cell performance was achieved by inducing a band gap gradient in the film thickness, which was triggered by the chalcogenization process. Specifically, after the preparation of an amorphous mixed oxide film of Cu, In, and Ga by a simple paste coating method chalcogenization under Se vapor, along with the flow of dilute H2S gas, resulted in the formation of CIGSSe films with graded composition distribution: S-rich top, In- and Se-rich middle, and Ga- and S-rich bottom. This uneven compositional distribution was confirmed to lead to a band gap gradient in the film, which may also be responsible for enhancement in the open circuit voltage and reduction in photocurrent loss, thus increasing the overall efficiency. The highest power conversion efficiency of 11.7% was achieved with Jsc of 28.3 mA/cm2, Voc of 601 mV, and FF of 68.6%.
URI
http://pubs.kist.re.kr/handle/201004/58262
ISSN
19448244
Appears in Collections:
KIST Publication > Article
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