Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Title
Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors
Authors
Noriyuki TaokaMasafumi Yokoyama김상현Rena SuzukiSunghoon LeeRyo IidaTakuya HoshiiWipakorn JevasuwanTatsuro MaedaTetsuji YasudaOsamu IchikawaNoboru FukuharaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2013-10
Publisher
Applied physics letters
Citation
VOL 103
Abstract
Combining the split capacitance-voltage method with Hall measurements revealed the existence of interface traps within the conduction band (CB) of InGaAs in metal-oxide-semiconductor (MOS) structures with Al2O3 (or HfO2)/InGaAs interfaces. The impact of these interface traps on inversion-layer mobilities in InGaAs MOS field-effect transistors with various interface structures was investigated. We found that the interface traps (>1013 cm−2 eV−1) induce Fermi level pining at an energy level 0.21–0.35 eV above the CB minimum, which degrades the mobilities in the high inversion carrier concentration region. Furthermore, the energy levels are tunable by changing the interface structures.
URI
http://pubs.kist.re.kr/handle/201004/58407
ISSN
00036951
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE