Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering

Title
Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering
Authors
김상현Masafumi YokoyamaNoriyuki TaokaRyo IidaSung-Hoon LeeRyosho NakaneYuji UrabeNoriyuki MiyataTetsuji YasudaHisashi YamadaNoboru FukuharaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2013-07
Publisher
IEEE transactions on nanotechnology
Citation
VOL 12, 621
Abstract
In this paper, we study the electron transport properties of thin-body InxGa1-xAs-on-insulator (InxGa1-xAs-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using two types of mobility enhancement engineering: an increase in the Indium (In) content of InGaAs channels and MOS interface buffer engineering. We have demonstrated a high peak mobility of 3180 cm2/(V·s) in our InAs-on-insulator (InAs-OI) MOSFETs, which were fabricated on Si substrates with MOS interface buffer layers by direct wafer bonding. The scattering mechanisms for the electron mobility in InxGa1-xAs-OI MOSFETs are systematically analyzed and identified. We conclude that the increase of the In content enhances phonon-limited mobility, whereas the use of the MOS interface buffer enhances thickness-fluctuation-limited mobility through the suppression of thickness fluctuation at the MOS interface.
URI
http://pubs.kist.re.kr/handle/201004/58409
ISSN
1536125X
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