Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

Title
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
Authors
C. Y. ChangMasafumi Yokoyama김상현Osamu IchikawaTakenori OsadaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2013-03
Publisher
Microelectronic engineering
Citation
VOL 109, 28
Abstract
Electrical properties of Al2O3 and HfO2/InGaAs metal–oxide–semiconductor (MOS) capacitors with Al, Au and Pd gate electrodes have been evaluated in order to study the impact of metal gate electrodes on gate dielectrics and interface properties. It is found that MOS capacitors with Pd gate electrode can provide thinnest capacitance-equivalent-thickness (CET) and better HfO2/InGaAs MOS interfaces than those with Al and Au. However, the Al2O3/InGaAs interface properties are better in Au and Al gate electrodes than in Pd. Thus, the combination of high-k and gate metals must be carefully examined for realizing optimum gate stacks.
URI
http://pubs.kist.re.kr/handle/201004/58410
ISSN
01679317
Appears in Collections:
KIST Publication > Article
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