High Mobility CMOS Technologies using III-V/Ge Channels on Si platform

Title
High Mobility CMOS Technologies using III-V/Ge Channels on Si platform
Authors
Shinichi Takagi김상현Masafumi YokoyamaRui ZhangNoriyuki TaokaYuji UrabeTetsuji YasudaHisashi YamadaOsamu IchikawaNoboru FukuharaMasahiko HataMitsuru Takenaka
Issue Date
2013-04
Publisher
Solid-state electronics
Citation
VOL 88, 2
Abstract
MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been paid to Ge and III–V channels. In this paper, possible solutions for realizing III–V/Ge MOSFETs on the Si platform are presented. The high quality III–V channel formation on Si substrates can be realized through direct wafer bonding. The gate stack formation is constructed on a basis of atomic layer deposition (ALD) Al2O3 gate insulators for both InGaAs and Ge MOSFETs. As the source/drain (S/D) formation, Ni-based metal S/D is implemented for both InGaAs and Ge MOSFETs. By combining these technologies, we demonstrate successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on a same wafer and their superior device performance.
URI
http://pubs.kist.re.kr/handle/201004/58411
ISSN
00381101
Appears in Collections:
KIST Publication > Article
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