Characterization of Ni?GaSb Alloys Formed by Direct Reaction of Ni with GaSb

Title
Characterization of Ni?GaSb Alloys Formed by Direct Reaction of Ni with GaSb
Authors
Cezar B. Zota김상현Masafumi YokoyamaMitsuru TakenakaShinichi Takagi
Issue Date
2012-07
Publisher
Applied Physics Express
Citation
VOL 5
Abstract
We report that direct reaction of Ni with GaSb can provide a Ni–GaSb alloy, which is a suitable metal for source/drain in metal source/drain GaSb p-metal oxide semiconductor field-effect transistors (PMOSFETs). The Ni–GaSb/GaSb contact has a large electron Schottky barrier height (SBH), 0:5 eV, and low hole SBH, 0:2 eV, enabling us to realize a high on/off-current ratio in PMOSFETs. We show that low sheet resistance of 7 / and low resistivity of 1:47 10 5 cm can be obtained for Ni–GaSb formed by annealing. Ni can also be etched selectively against the Ni–GaSb alloys, which allows us to employ a self-aligned source/drain formation process.
URI
http://pubs.kist.re.kr/handle/201004/58413
ISSN
18820778
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KIST Publication > Article
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