Characterization of Ni?GaSb Alloys Formed by Direct Reaction of Ni with GaSb
- Characterization of Ni?GaSb Alloys Formed by Direct Reaction of Ni with GaSb
- Cezar B. Zota; 김상현; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi
- Issue Date
- Applied Physics Express
- VOL 5
- We report that direct reaction of Ni with GaSb can provide a Ni–GaSb alloy, which is a suitable metal for source/drain in metal source/drain GaSb p-metal oxide semiconductor field-effect transistors (PMOSFETs). The Ni–GaSb/GaSb contact has a large electron Schottky barrier height
(SBH), 0:5 eV, and low hole SBH, 0:2 eV, enabling us to realize a high on/off-current ratio in PMOSFETs. We show that low sheet resistance of 7 / and low resistivity of 1:47 10 5 cm can be obtained for Ni–GaSb formed by annealing. Ni can also be etched selectively against the Ni–GaSb alloys, which allows us to employ a self-aligned source/drain formation process.
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