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dc.contributor.author지용성-
dc.contributor.author차안나-
dc.contributor.author이상아-
dc.contributor.author배수강-
dc.contributor.author이상현-
dc.contributor.author이동수-
dc.contributor.author최혜정-
dc.contributor.author왕건욱-
dc.contributor.author김태욱-
dc.date.accessioned2016-01-12T17:00:03Z-
dc.date.available2016-01-12T17:00:03Z-
dc.date.issued201602-
dc.identifier.citationVOL 29, 66-71-
dc.identifier.issn15661199-
dc.identifier.other46064-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/58423-
dc.description.abstractCross-bar array organic resistive memory devices enable high storage density but suffer from the issue of undesired cross-talk. A one transistor-one resistor (1T-1R) architecture offers a potential solution to this issue. However, all organic based 1T-1R architecture has not yet been demonstrated due to the difficulties in fabrication and operational voltage range mismatching between organic resistive memory and organic transistor. Herein, we demonstrate the first all-organic based 64 bit memory cell array utilizing 1T-1R architecture. The transfer and output curves of transistors in the 1T-1R cell array are governed by the memory cell and the 64 bit array show precise addressing due to gating of transistors. Moreover, the 1T-1R cell array encoded letters based on the standard ASCII character code.-
dc.publisherOrganic electronics-
dc.subjectorganic electronics-
dc.subjectmemory-
dc.subjecttransistors-
dc.titleIntegrated all-organic 8 x 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array-
dc.typeArticle-
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