Fabrication of Magnetic Tunnel Junctions With Co?? FeSi Heusler Alloy and MgO Crystalline Barrier

Title
Fabrication of Magnetic Tunnel Junctions With Co?? FeSi Heusler Alloy and MgO Crystalline Barrier
Authors
임우창최경민이택동서순애
Keywords
magnetic tunnel junction; Heusler alloy
Issue Date
2008-12
Publisher
IEEE transactions on magnetics
Citation
VOL 44, NO 2595
Abstract
Tunneling magnetoresistance (TMR) characteristics of magnetic tunnel junctions with a Co2 FeSi electrode and an MgO crystalline barrier have been investigated. Co2 FeSi Heusler alloy electrode grown on Cr-buffered MgO(100) substrate starts to have an L21 structure when annealed above 420 C. In the cases of CoFeB/MgO/Co2 FeSi junctions, a high TMR ratio of 158% has been achieved after annealing at 350 C, which is obtained by coherent tunneling between the electrodes and barrier, not by the half-metallic nature of Co2 FeSi Heusler alloy. However, the Co2 FeSi Heusler alloy electrode degrades the TMR ratio when compared with an amorphous CoFeB electrode and the bottom Co2 FeSi electrode makes more degradation of the TMR ratio than the top Co2 FeSi electrode. The major reason for the low TMR ratio in Co2 FeSi-based junctions is the broken epitaxial relationship between the bottom Co2 FeSi electrodes and the MgO crystalline barrier, which is investigated by a cross-sectional transmission electron micrograph.
URI
http://pubs.kist.re.kr/handle/201004/58459
ISSN
00189464
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE