All-electric spin transistor using perpendicular spins

Title
All-electric spin transistor using perpendicular spins
Authors
김지훈배주형민병철김형준장준연구현철
Keywords
Spin transistor; Perpendicular spin; Interface resistance; Schottky tunnelbarrier
Issue Date
2016-04
Publisher
Journal of magnetism and magnetic materials
Citation
VOL 403, 77-80
Abstract
All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 mΩ is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 mΩ at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin–orbit interaction system.
URI
http://pubs.kist.re.kr/handle/201004/58519
ISSN
03048853
Appears in Collections:
KIST Publication > Article
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