Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Title
Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors
Authors
송슬지김유진박민혁이영환김한준문태환김금도최정혜Zhihui ChenAnquan Jiang황철성
Issue Date
2016-02
Publisher
Scientific Reports
Citation
VOL 6, NO 20825
Abstract
Recent claim on the direct observation of a negative capacitance (NC) effect from a single layer epitaxial Pb(Zr0.2,Ti0.8)O3 (PZT) thin film was carefully reexamined, and alternative interpretations that can explain the experimental results without invoking the NC effect are provided. Any actual ferroelectric capacitor has an interfacial layer, and experiment always measures the sum of voltages across the interface layer and the ferroelectric layer. The main observation of decreasing ferroelectric capacitor voltage (VF) for increasing ferroelectric capacitor charge (QF), claimed to be the direct evidence for the NC effect, could be alternatively interpreted by either the sudden increase in the positive capacitance of a ferroelectric capacitor or decrease in the voltage across the interfacial layer due to resistance degradation. The experimental time-transient VF and QF could be precisely simulated by these alternative models that fundamentally assumes the reverse domain nucleation and growth. Supplementary experiments using an epitaxial BaTiO3 film supported this claim. This, however, does not necessarily mean that the realization of the NC effect within the ferroelectric layer is impractical under appropriate conditions. Rather, the circuit suggested by Khan et al. may not be useful to observe the NC effect directly.
URI
http://pubs.kist.re.kr/handle/201004/58655
ISSN
20452322
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