Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel

Title
Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel
Authors
Ki-Sik ImHee-Sung KangDo-Kywn KimSindhuri VodapallyYoHan ParkJae-Hoon Lee김용태Sorin CristoloveanuJung-Hee Lee
Keywords
AlGaN MISHFET; FinFET; Temperature measurement; Polar-optical-phonon scattering; Coulomb scattering
Issue Date
2016-03
Publisher
Solid-state electronics
Citation
VOL 120, 47-51
Abstract
AlGaN/GaN fin-shaped field-effect transistors (FinFETs) with variable fin width have been fabricated and characterized. Low-temperature measurements reveal distinct operation modes for wide FinFET, narrow FinFET and planar FET. The wide fin device exhibits broad transconductance (gm) that decreases sublinearly with increasing temperature due to the existence of the sidewall metal–oxide–semiconductor (MOS) channel. By comparison, the conventional planar AlGaN/GaN metal–insulator–semiconductor heterostructure FET (MISHFET) features relatively narrow gm curve and near-exponentially decay of gm with temperature. The effect of the sidewall channel becomes more prominent for the narrow fin device and leads to two distinct gm peaks. The first peak at negative gate voltage corresponds to the two-dimensional electron gas (2-DEG) channel, while the second peak at positive gate voltage is related to the sidewall MOS channel. Measurements also show that the electrons in 2-DEG channel experience polar-optical-phonon scattering unlike the electrons in the sidewall MOS channel which are mainly subject to Coulomb scattering.
URI
http://pubs.kist.re.kr/handle/201004/58773
ISSN
00381101
Appears in Collections:
KIST Publication > Article
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