Switching Power Universality in Unipolar Resistive Switching Memories

Title
Switching Power Universality in Unipolar Resistive Switching Memories
Authors
Jongmin KimKyooho JungYongmin KimYongcheol JoSangeun ChoHyeonseok WooSeongwoo LeeA.I.InamdarJinpyu Hong이전국Hyungsang KimHyunsik Im
Keywords
switching power universality; unipolar resistive switching; non-volatile memories; switching current universality; binary metal oxide
Issue Date
2016-04
Publisher
Scientific Reports
Citation
VOL 6, 23930
Abstract
We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R−β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.
URI
http://pubs.kist.re.kr/handle/201004/58823
ISSN
20452322
Appears in Collections:
KIST Publication > Article
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