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dc.contributor.author유태희-
dc.contributor.author상병인-
dc.contributor.author왕병용-
dc.contributor.author임대순-
dc.contributor.author강현욱-
dc.contributor.author최원국-
dc.contributor.author오영제-
dc.contributor.author황도경-
dc.date.accessioned2016-05-10T14:19:03Z-
dc.date.available2016-05-10T14:19:03Z-
dc.date.issued2016-04-
dc.identifier.citationVOL 68, NO 7, 901-907-
dc.identifier.issn03744884-
dc.identifier.other46537-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/58877-
dc.description.abstractAmorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.-
dc.publisherJournal of the Korean Physical Society-
dc.subjectInGaZnO-
dc.subjectthin-film transistors-
dc.subjectpH Sensor-
dc.subjectSilver Nanowire-
dc.titleMetal-oxide Thin-film Transistor-based pH Sensor with a Silver Nanowire Top Gate Electrode-
dc.typeArticle-
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